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Hydrogenation of boron acceptor in silicon during electron injection by Fowler–Nordheim tunneling

 

作者: Calvin Yi‐Ping Chao,   Marie Shiang‐Chyong Luo,   Samuel Cheng‐Sheng Pan,   Chih‐Tang Sah,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 4  

页码: 180-181

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97654

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Hydrogenation of the boron acceptor in silicon is observed during Fowler–Nordheim tunneling injection of electrons for the first time. Experiment is also presented which shows that the existence of free holes at the silicon surface is not important for boron hydrogenation.

 

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