Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires fabricated on (111)Bfacet by glancing‐angle molecular beam epitaxy
作者:
N. Tomita,
M. Tanaka,
T. Saeki,
S. Shimomura,
S. Hiyamizu,
K. Fujita,
T. Watanabe,
T. Higuchi,
N. Sano,
A. Adachi,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 6
页码: 3550-3554
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588795
出版商: American Vacuum Society
关键词: GaAs;(Al,Ga)As
数据来源: AIP
摘要:
GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires (T‐QWRs) were fabricated by growing Al0.3Ga0.7As/GaAs (well thickness of GaAsLw=4.4 nm) on a (111)Bfacet plane that was formed when a GaAs/Al0.3Ga0.7As multi‐quantum well (MQW) layer (Lw=4.5 nm) was grown on a reverse‐mesa etched GaAs(100) substrate by glancing‐angle molecular beam epitaxy (GA‐MBE). Growth conditions of the tilted T‐QWR were optimized, and full width at half‐maximum (FWHM) of a cathodoluminescence (CL) peak from the tilted T‐QWRs was reduced down to 19 meV at 78 K, which is about one‐third of that (61 meV) of previous GaAs/Al0.3Ga0.7As tilted T‐QWRs.
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