Germanium is experiencing a resurgence of interest due to superior intrinsic properties and recently overcome technological limitations. This paper addresses the problem of Schottky barrier height control. The Fermi level of metal/Ge contacts is pinned at between 0.54 and 0.61 eV below the conduction‐band edge, independent of the contacting metallization. We compare the modulation of effective barrier height by means of shallow ion implantation, epitaxial growth, and diffusion from a doped level to create a thin, highly doped interfacial region. Lowering ofn‐type contacts from 0.54 to 0.4 eV, at room temperature, and enhancement ofp‐type contacts from 0.09 to 0.23 eV, at 77 K, have been achieved. Experimental results are compared to computer model calculations.