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Oriented aluminum nitride thin films deposited by pulsed‐laser ablation

 

作者: M. Grant Norton,   Paul G. Kotula,   C. Barry Carter,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 70, issue 5  

页码: 2871-2873

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.349352

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Single‐phase aluminum nitride thin films with preferred crystallographic orientations have been grown on single‐crystal sapphire by pulsed‐laser ablation. The orientation of the films was found to be determined by the atmosphere and the nitrogen pressure during deposition and the substrate temperature. The films were examined by x‐ray diffraction, and scanning electron microscopy.

 

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