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Pulsed laser‐induced changes in structural and electrical properties of Pb0.8Sn0.2Te thin films

 

作者: A. L. Dawar,   C. Jagadish,   P. C. Mathur,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 8  

页码: 2994-2996

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337753

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Pb0.8Sn0.2Te films, grown by flash evaporation, were irradiated with Nd:YAG laser pulses of various energy densities. Transmission electron microscopy, x‐ray diffraction, and electrical studies reveal that the irradiation significantly increases grain size, and the mobility increases by a factor of 5.

 

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