Epitaxial growth of 6H–SiC on 6H–SiC(0001) via two‐dimensional nucleation was realized at 930 °C by solid‐source molecular beam epitaxy using the alternate supply of Si and C. The deposition was controlled to an atomic level by surface superstructures. The growth was started on the (&sqrt;3×&sqrt;3)R30° surface which turns into the (1×1) phase upon deposition of about 1 monolayer silicon and recurs after subsequent deposition of about 1 monolayer carbon. Deviations from the monolayer deposition and, moreover, growth around substrate related defects result in the deposition of 3C–SiC. ©1996 American Institute of Physics.