Dislocation velocity measurements in semi-insulating In-doped GaAs
作者:
N. Burle-Durbec,
B. Pichaud,
F. Minari,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1987)
卷期:
Volume 56,
issue 5
页码: 173-178
ISSN:0950-0839
年代: 1987
DOI:10.1080/09500838708214704
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The mean velocities of α, β and screw dislocations in doped GaAs have been determined by X-ray topography. Although the velocities of β dislocations were found to be nearly equal to those measured in undoped material, the velocities of α and screw dislocations were lower. The activation energies for dislocation motion were found to be approximately the same as in undoped material, except for temperatures higher than 400°C and values of the resolved shear stress, σ, less than 10 MPa. In this range, the mobilities of α and screw dislocations were more severely reduced and were time-dependent. We suggest that these different effects are related to a selective interaction between the dopant (In) and α partials.
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