Incremental sheet resistance and spreading resistance: A comparison
作者:
G. Queirolo,
M. L. Polignano,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 1
页码: 408-412
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586366
出版商: American Vacuum Society
关键词: ELECTRIC CONDUCTIVITY;CARRIER DENSITY;SIMS;HALL EFFECT;CARRIER MOBILITY;ANNEALING;DEPTH PROFILES;SILICON;ION IMPLANTATION;ARSENIC IONS;PHOSPHORUS IONS;BORON FLUORIDES;Si:As;Si:P;Si:BF2
数据来源: AIP
摘要:
Spreading resistance measurements are widely used to obtain carrier depth profiles in shallow silicon diffused layers. The transformation of the raw spreading resistance data into concentration data relies on the calibration of the system against standards of known resistivity. This procedure implies that, for a given carrier concentration, the analyzed sampleandthe standards have the same carrier mobility. However, this hypothesis is not verified when other carrier scattering centers, in addition to those active in a perfect silicon single crystal (lattice and ionized impurities), are present in the sample. In this case spreading resistance cannot give the correct carrier concentration and an independent measurement of carrier mobility must be performed. In addition, uniform standards are not easily available at the very high doping levels used, for instance, for the source and drain diffusion of complementary metal–oxide semiconductor devices, or for the emitter diffusion in bipolar devices. In this paper we compare the results obtained with incremental sheet resistance and sheet Hall coefficient, secondary ion mass spectrometry, and spreading resistance measurements on samples implanted with BF2at high fluence and annealed at low temperatures, and on high fluence arsenic implanted layers. Rapid thermal annealed samples, implanted with As, As and P, and BF2have been also studied, due to the present interest in this low thermal budget method for dopant activation.
点击下载:
PDF
(388KB)
返 回