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Polysilicon transistors on glass by pulsed‐laser annealing

 

作者: F. Morin,   P. Coissard,   M. Morel,   E. Ligeon,   A. Bontemps,  

 

期刊: Journal of Applied Physics  （AIP Available online 1982）
卷期: Volume 53, issue 5  

页码: 3897-3899

 

ISSN:0021-8979

 

年代: 1982

 

DOI:10.1063/1.331094

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Amorphous silicon thin films deposited on glass substrates were crystallized by pulsed‐laser annealing. A grain size up to 2000 A˚ was observed. Transistors were made, and electrical measurements showed that the field‐effect mobility was in the range 15–20 cm2/V s, instead of 10−2−10−3cm2/V s in the unannealed regions.

 

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