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Schottky‐barrier field‐effect transistors of 3C‐SiC

 

作者: S. Yoshida,   H. Daimon,   M. Yamanaka,   E. Sakuma,   S. Misawa,   K. Endo,  

 

期刊: Journal of Applied Physics  （AIP Available online 1986）
卷期: Volume 60, issue 8  

页码: 2989-2991

 

ISSN:0021-8979

 

年代: 1986

 

DOI:10.1063/1.337751

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Schottky‐barrier field‐effect transistors have been fabricated first from 3C‐type SiC. Al‐dopedp‐type and nondopedn‐type 3C‐SiC epilayers were successively grown onp‐type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky‐barrier gate contacts and ohmic (source and drain) contacts forn‐type SiC. Transistor operation was observed for the first time for the field‐effect transistors of 3C‐SiC.

 

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