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Charge‐density fluctuations and spatial modulation of heavy‐ and light‐hole‐like character in GaAs‐AlGaAs(001) superlattices

 

作者: M. A. Gell,   M. Jaros,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 48, issue 18  

页码: 1214-1216

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96985

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have used local pseudopotentials with spin‐orbit coupling to illustrate some of the effects occurring in GaAs‐AlGaAs (001) superlattices as a result of fluctuations in the widths of the layers. Full account is taken of the microscopic superlattice potential, and states associated with the principal as well as secondary band minima are presented. It is shown that fluctuations of only one monolayer can lead to acompletetransfer of probability density into the lowest &Ggr;‐related symmetry‐induced state. This also applies to states associated with the secondary band minima confined in the hot‐electron range of energies. We also show that small fluctuations in layer width can be used to achieve a tunable spatial modulation of heavy‐ and light‐hole‐like character within thesamesuperlattice state. We discuss some of the implications of our results for band structure engineering.

 

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