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Reactive ion etching of polycrystalline silicon using SiCl4

 

作者: Y. S. Tang,   C. D. W. Wilkinson,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 25  

页码: 2898-2900

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104715

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Reactive ion etching of polycrystalline silicon using SiCl4was used to etch 70‐nm‐wide structures. The etching mechanism of the process was investigated by using emission spectroscopy. It was found that the principal etchant for polycrystalline silicon is Cl+2.

 

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