Picosecond transient reflectivity of unpinned gallium arsenide (100) surfaces
作者:
S. M. Beck,
J. E. Wessel,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 3
页码: 149-151
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97644
出版商: AIP
数据来源: AIP
摘要:
Surface recombination was measured for photowashed and unwashed GaAs using picosecond transient photoreflectance methods. The results for the washed surfaces clearly demonstrate slow surface recombination that is accurately described by an ambipolar diffusion model. The fast decay observed for unwashed samples implies rapid surface recombination involving a more complex mechanism.
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