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Differences in physical properties of hydrogenated and fluorinated amorphous silicon carbide prepared by reactive sputtering

 

作者: F. Demichelis,   C. F. Pirri,   E. Tresso,   T. Stapinski,  

 

期刊: Journal of Applied Physics  （AIP Available online 1992）
卷期: Volume 71, issue 11  

页码: 5641-5645

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.350496

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The paper deals with structural, optical, and electrical properties ofa‐SiC:H anda‐SiC:H,F films prepared by rf sputtering of a silicon target in Ar+H2+CH4and Ar+H2+CF4gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.

 

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