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Studies of the dislocation loops produced in III–V semiconducting compounds of B3 structure by irradiation in a high voltage electron microscope

 

作者: F. Reynaud,   B. Legros-de Mauduit,  

 

期刊: Radiation Effects  （Taylor Available online 1985）
卷期: Volume 88, issue 1-2  

页码: 1-16

 

ISSN:0033-7579

 

年代: 1985

 

DOI:10.1080/00337578608207492

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Dr. F. Reynaud studied metallurgy at the School of Mines in Saint-Etienne (1962–1965). He joined the Laboratoire d'Optique Electronique du C.N.R.S. in Toulouse (France) first as a graduate engineer (1965), then as a scientist (1973). He received the Jules Garnier prize (1974) awarded by the French Society of Metallurgy and spent a sabbatical year (1975) in the Max-Planck-Institut für Metallforschung (Institut für Werkstoffwissenschaften) in Stuttgart (F.R.G.).

 

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