Reticle fabrication by high acceleration voltage electron beam: Representative figure method for proximity effect correction [VI]
作者:
Takayuki Abe,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 4
页码: 2474-2484
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588756
出版商: American Vacuum Society
关键词: MEMORY DEVICES;MANUFACTURING;ELECTRON BEAMS;PROXIMITY EFFECT;MASKING;DOSES;ALGORITHMS;REAL TIME SYSTEMS
数据来源: AIP
摘要:
Proximity effect correction for reticle making by the dose correction method is discussed. A new algorithm for calculating the optimum dose is proposed, which is based on the dose formula method and the representative figure method. Its main feature is that dose evaluation points are fixed at individual small regions whose size is sufficiently small compared with the backscattering range. The calculation speed of the computer is evaluated which is sufficient to suppress the correction time to less than the writing time. The required calculation speed is 500 MIPS×4 CPU at most for a minimum feature size greater than 0.2 μm on the reticle. This result suggests that the real‐time proximity effect correction is possible for making reticles. Furthermore, when the algorithm is applied to x‐ray mask fabrication and direct writing process, the calculation time can be suppressed to less than the writing time.
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