The behavior of the Zn acceptor in conjunction with the N isoelectronic trap in GaAs1−xPxis studied. The photoluminescence spectra of GaAs1−xPx: N : Zn, dopedptype by dilute Zn diffusion, are shifted to lower energy by an amountEZn≃30 meV (x<xc≃0.46, 77°K) for recombination transitions involving the &Ggr; band edge, theAline, or NN pairs. For transitions involving theAline or NN pairs and crystal composition beyond the direct‐indirect transition (x>xc), the spectral shift due to the Zn acceptor weakens with increasingx, which is in accord with the relative weakening ofk= 0 recombination components asE&Ggr;increases relative toE&khgr;. Photopumped laser operation of GaAs1−xPx: N : Zn (x< 0.46) platelets is demonstrated on Zn&sngbnd;N transitions. No effect is observed attributable to Zn&sngbnd;N complexes.