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A Field Effect Transistor Sensitive to the Phenobarbical Anion

 

作者: A.K. Covington,   T.R. Harbinson,   A. Sibbald,  

 

期刊: Analytical Letters  （Taylor Available online 1982）
卷期: Volume 15, issue 17  

页码: 1423-1429

 

ISSN:0003-2719

 

年代: 1982

 

DOI:10.1080/00032718208064439

 

出版商: Taylor & Francis Group

 

关键词: Sodium phenobarbital;chemically sensitive field effect transistor;ion-sensitive field effect transistor;stability;speed of response;selectivity ratio

 

数据来源: Taylor

 

摘要:

A field effect transistor sensitive to the phenobarbital anion is described. The response is Nernstian between 10−1mol 1−1and 10−4mol 1−1in the absence of added hydroxide, and 10−1mol 1−1to 10−3mol 1−1in the presence of added hydroxide. Selectivities over sulphate, chloride, nitrate, hydrogen phosphate have been determined and speed of response and stability are greater than the corresponding coated wire electrode.

 

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