Chemical vapor deposition of Pb1−xLaxTiO3
作者:
PeterC. van Buskirk,
Jeffrey Roeder,
Steve Bilodeau,
Sonya Pombrik,
Howard Beratan,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 6,
issue 1-4
页码: 141-153
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508019360
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We report chemical vapor deposition (CVD) of PbLaTiO3films for integrated pyroelectric devices. Pb(thd)2, La(thd)3and Ti(O-Pr)2(thd)2were introduced to the reactor via a single liquid precursor solution that is vaporized. Substrate temperatures were approximately 535°C and post deposition annealing was not used. Films were deposited on fused silica and Pt metallized Si substrates. The liquid delivery technique permitted excellent composition control and films on fused silica were predominantly [100] oriented with trace amounts of [110] and [111] present. Pyroelectricity for 0.7μm thick films deposited on Pt metallized Si was measured using a modified Byer-Roundi technique and pyroelectric coefficients as high as 90 nC/cm2·K were observed. The high crystalline quality and pyroelectric properties are attributed to the excellent composition control afforded by the liquid delivery CVD technique.
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