Preparation and characteristics of CuGaSe2/CdS solar cells
作者:
N. Romeo,
G. Sberveglieri,
L. Tarricone,
C. Paorici,
期刊:
Applied Physics Letters
(AIP Available online 1977)
卷期:
Volume 30,
issue 2
页码: 108-110
ISSN:0003-6951
年代: 1977
DOI:10.1063/1.89307
出版商: AIP
数据来源: AIP
摘要:
p‐CuGaSe2/n‐CdS heterojunctions have been prepared by depositing CdS films onp‐type CuGaSe2single crystals whose initial resistivity was 10−2&OHgr; cm and changed to 1 &OHgr; cm after the CdS film deposition. The CdS films, which were grown by a multisources method, exhibit a room‐temperature resistivity of 0.1 &OHgr; cm. The absolute quantum efficiency of these devices as photovoltaic detectors reaches the value of 80% at a wavelength of 5800 A˚. As solar cells, these heterojunctions at 25 °C display a solar power conversion efficiency of 5% when they are exposed to the solar light whose intensity is 71 mW/cm2. When the heterojunctions are directly polarized, they emit light in a broad band which is centered at ∼7700 A˚. An external electroluminescent emission efficiency of about 0.05% has been measured at liquid‐nitrogen temperature.
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