Annealing temperature dependence of Raman scattering inGe+-implantedSiO2films
作者:
X. L. Wu,
T. Gao,
X. M. Bao,
F. Yan,
S. S. Jiang,
D. Feng,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 5
页码: 2704-2706
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.366089
出版商: AIP
数据来源: AIP
摘要:
We have examined the Raman spectra of violet and infrared emittingGe+-implantedSiO2films with special emphasis upon annealing temperature (AT) dependence of Raman scattering. We found that the complete spectrum mainly consists of three bands at 220–280, 300, and 430cm−1, corresponding to scattering of Ge-related components, Ge nanocrystallites, and localized Si–Si optical phonons in the Ge neighborhoods, respectively. The Ge crystalline band shows an obvious AT dependence. The theoretical result from the phonon confinement model can predict its linewidth change with AT, but cannot explain its constant peak frequency. Based on the experimental result from x-ray diffraction, we attributed the discrepancy mainly to the compressive stress exerted on Ge nanocrystallites, which leads to the upshift of Ge crystallite peak thereby basically compensating the downshift caused by the confinement on phonon frequency. ©1997 American Institute of Physics.
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