首页   按字顺浏览 期刊浏览 卷期浏览 Luminescence in scanning tunneling microscopy on III–V nanostructures
Luminescence in scanning tunneling microscopy on III–V nanostructures

 

作者: S. F. Alvarado,   Ph. Renaud,   D. L. Abraham,   Ch. Schönenberger,   D. J. Arent,   H. P. Meier,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 2  

页码: 409-413

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585582

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;QUANTUM WELL STRUCTURES;ELECTROLUMINESCENCE;SCANNING TUNNELING MICROSCOPY;RECOMBINATION;BAND STRUCTURE;TRANSPORT PROCESSES;MINORITY CARRIERS;DIFFUSION LENGTH;SURFACE STATES;TRAPS;(AlGa)As

 

数据来源: AIP

 

摘要:

Using electroluminescence associated with scanning tunneling microscope in AlxGa1−xAs heterostructures, we show that: (a) luminescence due to recombination can be induced within single quantum wells of dimensions down to a few nm and can also be used to image them, (b) the energy of bulk bands can be determined, and (c) transport parameters can be measured, e.g., the thermalization length and the diffusion length of minority electrons. This technique opens up new possibilities for the study and characterization of semiconductors and devices—including the possibility of studying surface states and single trapping centers associated with lattice defects, impurities, chemisorbed species, etc.

 

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