GraphoepitaxialNi50Ti50films were grown on Si substrates by sputter deposition of an alloy target. The microstructure evolution of the film was investigated by hot stage atomic force microscopy. The topological features of the martensitic graphoepitaxialNi50Ti50films are directly associated with etch pits on the surface of the silicon substrate and exhibit facets with well-defined preferential in-plane orientation. The highly ordered martensitic facets disappear as the film transforms to austenite at elevated temperatures. ©1998 American Institute of Physics.