Stripe‐geometry AlGaAs‐GaAs quantum‐well heterostructure lasers defined by impurity‐induced layer disordering
作者:
K. Meehan,
J. M. Brown,
N. Holonyak,
R. D. Burnham,
T. L. Paoli,
W. Streifer,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 7
页码: 700-702
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94883
出版商: AIP
数据来源: AIP
摘要:
Stripe‐geometry AlGaAs‐GaAs single quantum‐well heterostructure lasers are demonstrated in which the region complementary to the stripe (outside of and defining the stripe) is shifted to higher band gap, and lower refractive index, by low‐temperature (600 °C) Zn diffusion. Impurity‐induced Al‐Ga interdiffusion causes the single GaAs quantum well (x=0,Lz≊80 A˚) outside of the stripe region to be mixed (‘‘absorbed,’’x→x′) into the Alx′Ga1−x′As (x′∼0.3,Lz′≊0.18 &mgr;m) bulk‐layer waveguide of the crystal.
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