Characterization of strained InGaAs single quantum well structures by ion beam methods
作者:
Kin Man Yu,
K. T. Chan,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 1
页码: 45-47
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102642
出版商: AIP
数据来源: AIP
摘要:
We have investigated strained InGaAs single quantum well structures using MeV ion beam methods. The structural properties of these structures, including composition and well size, have been studied. It has been found that the composition obtained by Rutherford backscattering spectrometry and particle‐induced x‐ray emission techniques agrees very well with that obtained by the ion channeling method.
点击下载:
PDF
(348KB)
返 回