Tungsten (W) films are deposited on sputter‐deposited TiN adhesion layers in a cold‐wall chemical vapor deposition reactor, initiated with the deposition of a W nucleation layer by SiH4reduction of WF6. H2is also introduced in the reactor for some depositions. The electrical resistivity and mechanical stress of the W films are found to be dependent on the underlying TiN layers as well as on the presence of H2during W nucleation layer deposition. A higher resistivity is obtained when the W is deposited on the TiN prepared at 250 °C than on the TiN prepared at 450 °C. For the W deposited on the low‐temperature TiN, the resistivity is reduced by adding H2to the reactants during W nucleation layer deposition; while for the W deposited on the high‐temperature TiN, the resistivity is almost insensitive to the H2addition. More oxygen and fluorine are found at the W–TiN interface for the W deposited on the low‐temperature TiN than on the high‐temperature TiN. Introduction of H2to the reactants during W nucleation layer deposition reduces the concentrations of interfacial fluorine and oxygen, in agreement with thermodynamic predictions. A lower film stress is obtained for the W deposited on the high‐temperature TiN layers and/or with H2addition. The W films become less textured when H2is introduced to the reactants during W nucleation layer deposition. ©1995 American Institute of Physics.