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Surface‐related breakdown in silicon: Imaging of current filaments in longp+‐n−‐n+structures

 

作者: B. J. Hankla,   P. F. Williams,   G. A. Frecks,   F. E. Peterkin,  

 

期刊: Applied Physics Letters  （AIP Available online 1995）
卷期: Volume 67, issue 26  

页码: 3942-3944

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.114412

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We present Schlieren images which show the existence and evolution of current filaments during the very early stages of surface‐related breakdown inside 1 cm siliconp+‐n−‐n+structures. These images confirm our previous finding that breakdown occurs in the silicon rather than in the ambient, and suggest that a streamerlike mechanism may be responsible. ©1995 American Institute of Physics.

 

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