We have explored the application of chemical derivatives ofC60as high-resolution electron beam resists. Facile spin coating was used to produce∼100-nm-thick films of aC60tris adduct (three functional groups) on Si surfaces. We find that these films function as high-resolution negative resists for electron beam lithography using monochlorobenzene as a developer. The film has a sensitivity of∼1 mC/cm2for 20 keV electrons, an order of magnitude higher than that ofC60itself, and the dry-etch durability is much better than that of conventional novolac based electron beam resists. Features with widths of 20 nm were produced. ©1998 American Institute of Physics.