Preparation and properties of sputtered lead titanate thin films on MgO single crystals and mgo buffer layers
作者:
N. Neumann,
R. Bruchhaus,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 4
页码: 243-250
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012565
出版商: Taylor & Francis Group
关键词: lead titanate thin film;reactive multitarget sputtering;dielectric and pyroelectric properties
数据来源: Taylor
摘要:
By means of planar multitarget sputtering (001) oriented PbTiO3films were deposited onto highly preferred (100) oriented platinum electrodes on (100) MgO single crystal substrates. Single phase perovskite type films with a degree of (001) orientation between 60% and 70% have been sputtered at substrate temperatures as low as about 470°C. The as grown films exhibit a dielectric constant in the range of 120 to 140 and a pyroelectric coefficient of about 20 nCcm−2K−1at room temperature. The dielectric loss is about 0.01 at frequencies from 1 to 10 kHz. (100) GaAs substrates with an evaporated, highly oriented (100) MgO buffer layer were also used as substrates. However, on these substrates the platinum bottom electrode did not grow highly oriented though the same deposition parameters for Pt deposition as in the case of the single crystalline MgO substrate were used. That's why PbTiO3was produced with a lower (001) preferred orientation. Therefore, the dielectric constant is higher (170–190) and the pyroelectric coefficient is lower (12 nCcm−2K−1).
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