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A novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C)

 

作者: Bijan Tadayon,   Saied Tadayon,   J. G. Zhu,   M. G. Spencer,   G. L. Harris,   J. Griffin,   L. F. Eastman,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1990）
卷期: Volume 8, issue 2  

页码: 131-133

 

ISSN:0734-211X

 

年代: 1990

 

DOI:10.1116/1.584839

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;EPITAXIAL LAYERS;FABRICATION;MEDIUM TEMPERATURE;DOPED MATERIALS;INDIUM;OPTICAL PROPERTIES;RAMAN SPECTROSCOPY;PHOTOLUMINESCENCE;TRANSMISSION ELECTRON MICROSCOPY;GaAs;GaAs:In

 

数据来源: AIP

 

摘要:

In this work, a novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C) is introduced. This novel method is based on three different methods: The migration‐enhanced epitaxy method, the indium doping method, and the low growth rate method. The good quality of the GaAs layers are confirmed by Raman spectroscopy, 4 K photoluminescence, and transmission electron microscopy. This novel growth method results in the best GaAs material ever grown at 120 °C by any growth method using a molecular beam epitaxy machine.

 

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