Low‐energy electron diffraction intensity from crystallized Si film after solid phase epitaxial growth of its amorphous phase was measured. The intensity profile always shows a formation of 7×7 reconstructed structure, and the intensityIdepends on the thickness of the amorphous Si film,d: the value ofIfrom the crystallized film withd<30 A˚ is the same as that from the 7×7 reconstructed Si (111) substrate;Idecreases exponentially with the increase ofd(30 A˚<d<200 A˚). The change ofIis discussed from the viewpoint of the crystallization of the amorphous film composed of strongly distorted microcrystalline‐like grains which have a uniform orientation due to the proximity effect of the Si (111) substrate.