首页   按字顺浏览 期刊浏览 卷期浏览 Precipitate morphologies in heat‐treated Czochralski silicon crystals
Precipitate morphologies in heat‐treated Czochralski silicon crystals

 

作者: H. L. Tsai,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 58, issue 10  

页码: 3775-3778

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335590

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Three types of oxygen precipitate morphologies at 1050 °C have been identified to be plate‐type, pyramidal, and polyhedral. This study was carried out using a set of slices with the same initial oxygen concentration but varying carbon concentrations. The morphology is shown to depend on carbon concentration and heat treatment. It is demonstrated that increasing carbon concentration tends to change the morphology from the plate to polyhedra and enhance the nucleation rate at low temperatures.

 

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