Comment on ‘‘Native acceptor levels in Ga‐rich GaAs’’ [J. Appl. Phys.65, 596 (1989)]
作者:
W. J. Moore,
B. V. Shanabrook,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 12
页码: 7618-7619
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345803
出版商: AIP
数据来源: AIP
摘要:
Recent results suggesting that 78‐meV acceptors appear only inn‐type material while 68‐meV acceptors appear inp‐type material are in direct conflict with several clear experiments which establish the existence of a 78‐meV acceptor inp‐type GaAs beyond any reasonable doubt. The available evidence for the 78‐meV center is reviewed and some possible sources of error in DLTS and photoluminescence data are mentioned.
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