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Comment on ‘‘Native acceptor levels in Ga‐rich GaAs’’ [J. Appl. Phys.65, 596 (1989)]

 

作者: W. J. Moore,   B. V. Shanabrook,  

 

期刊: Journal of Applied Physics  (AIP Available online 1990)
卷期: Volume 67, issue 12  

页码: 7618-7619

 

ISSN:0021-8979

 

年代: 1990

 

DOI:10.1063/1.345803

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Recent results suggesting that 78‐meV acceptors appear only inn‐type material while 68‐meV acceptors appear inp‐type material are in direct conflict with several clear experiments which establish the existence of a 78‐meV acceptor inp‐type GaAs beyond any reasonable doubt. The available evidence for the 78‐meV center is reviewed and some possible sources of error in DLTS and photoluminescence data are mentioned.

 

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