The dominant deep level defects related to copper and nickel inp‐type silicon have been studied using deep level transient spectroscopy. Three acceptor states are observed in copper‐doped silicon (Ev+0.20 eV,Ev+0.35 eV, andEv+0.53 eV) and three acceptor states observed in nickel‐doped silicon (Ev+0.18 eV,Ev+0.21 eV, andEv+0.33 eV). All of these defects are neutralized by reaction with atomic hydrogen, and a concentration profile for theEv+0.18 eV Ni‐related state is given as a function of the duration and temperature of the exposure to the hydrogen plasma. Gamma irradiation produces additional donor levels atEc−0.38 eV in the copper‐doped material, and atEc−0.32 eV in the nickel‐doped material. Finally, the room temperature motion of three of the acceptor levels, Cu(Ev+0.20 eV) and Ni(Ev+0.21 eV,Ev+0.33 eV), under the influence of the electric field in a reverse biasedp‐njunction is reported. The mobilities obtained for centers associated with these three levels at 25 °C were 10−14, 6×10−15, and 2×10−15cm2 V−1 s−1, respectively.