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GaAs‐oxide removal using an electron cyclotron resonance hydrogen plasma

 

作者: Z. Lu,   M. T. Schmidt,   D. Chen,   R. M. Osgood,   W. M. Holber,   D. V. Podlesnik,   J. Forster,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 11  

页码: 1143-1145

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104397

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The surface chemistry of GaAs‐oxide removal with an electron cyclotron resonance (ECR) hydrogen plasma has been investigated with x‐ray photoelectron spectroscopy. It is found that As oxide is efficiently removed at room temperature, and heating expedites the removal of Ga oxide. Band bending changes during ECR hydrogen‐plasma oxide reduction are also discussed.

 

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