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High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy

 

作者: O. Aina,   M. Serio,   M. Mattingly,   J. O’Connor,   S. K. Shastry,   D. S. Hill,   J. P. Salerno,   P. Ferm,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 3  

页码: 268-270

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105617

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated the first heterojunction phototransistor (HPT) on InP‐on‐Si. These phototransistors, based on the InP/GaInAs heterojunction, have optical gains as high as 125 A/W at 1300 nm and dark currents as low as 300 pA, for a 48×64 &mgr;m HPT. The bandwidth was determined from impulse photoresponse measurements to be 4.4 GHz. The intrinsic bandwidth was estimated from the zero bias capacitance (0.2 pf) to be as high as 16 GHz.

 

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