The Application of the Method of Pseudopotentials to Hydrides of Silicon and their Methyl Analogs
作者:
Rudolf Janoschek,
Alexander Sax,
E. Amitai Halevi,
期刊:
Israel Journal of Chemistry
(WILEY Available online 1983)
卷期:
Volume 23,
issue 1
页码: 58-65
ISSN:0021-2148
年代: 1983
DOI:10.1002/ijch.198300008
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe method of local pseudopotentials is applied to the calculation of several ground‐ and excited‐state properties of selected silicon compounds. The calculated ground‐state geometries and ionization potentials of the silicon hydrides: SiH, SiH2, SiH3and SiH4and of the ions SiH+, SiH−, SiH+3and SiH−3are in good agreement with the best theoretical and experimental results — whenever these are available. All the singly excited states of SiH2originating from a given occupied orbital are evaluated in a single calculation. For those few valence states for which reliable experimental and theoretical data exist, agreement is good. The conceptual and computational advantages of transforming the basis set of silicon into a set of atomic pseudoorbitals are demonstrated by repeating the latter computations with increasingly large sets of atomic orbitals, ranging from [3s, 3p] to [3s, 3p, 3d, 4s, 4p]. The utility of this procedure for reliable and economical calculations on organosilicon compounds is illustrated with a similar set of computations on the ground‐state properties and vertical excitation energies of Si(CH3)2. The effect of methyl substitution on the ground‐state properties of silylene and on the energetic ordering of its excited stat
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