Epitaxial thin films of bismuth titanate Bi4Ti3O12have been grown by laser molecular beam epitaxy on SrTiO3(001) and Bi2Sr2CaCu2O8(001) single crystal at low processing temperature. X‐ray diffraction patterns exhibit thatc‐axis oriented Bi4Ti3O12thin films can be grown at a substrate temperature as low as 450 °C with good crystallinity and no presence of secondary phases. RHEED patterns evidence the flat surface of the films and the layer‐by‐layer growth mode. ©1995 American Institute of Physics.