Improvement of leakage currents ofPt/(Ba, Sr)TiO3/Ptcapacitors
作者:
Jae-Hyun Joo,
Jeong-Min Seon,
Yoo-Chan Jeon,
Ki-Young Oh,
Jae-Sung Roh,
Jae-Jeong Kim,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 22
页码: 3053-3055
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118746
出版商: AIP
数据来源: AIP
摘要:
Pt/(Ba, Sr)TiO3/Ptcapacitors fabricated by sputtering technique showed abnormally higher leakage current when negative bias was applied to the top electrode. In this letter, two kinds of processes were attempted to reduce high leakage current of Pt/BST/Pt capacitors for dynamic random access memory devices: (1) postannealing underO2atmosphere and (2) adding oxygen into sputtering gas of platinum top electrode. These processes were very effective to reduce the oxygen vacancy in the BST films which are mostly responsible for such a high leakage current. The higher reverse currents were significantly lowered by these processes, so that we could obtain symmetric current versus voltage curves of Pt/BST/Pt capacitors. ©1997 American Institute of Physics.
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