Dopant incorporation during epitaxial growth of a multicomponent oxide thin film from vapor phase: A case study of Fe/YBa2Cu3O7−&dgr;system
作者:
S. B. Ogale,
I. Takeuchi,
M. Rajeswari,
R. L. Greene,
T. Venkatesan,
D. D. Choughule,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 13
页码: 1674-1676
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113889
出版商: AIP
数据来源: AIP
摘要:
Incorporation of Fe in YBa2Cu3O7−&dgr;matrix during its epitaxial growth on (001) LaAlO3by pulsed excimer laser ablation is examined. It is shown that oxygen pressure during deposition plays a critical role in the incorporation process and that a low‐temperature postsynthesis annealing is essential for complete substitution. Clustering of iron atoms and its control via the anion controlled reactions are identified as the key features in this context. It is also shown by using atomic force microscopy that Fe incorporation influences the surface morphology. These issues are of importance in the formation of cationic defects in multicomponent thin films. ©1995 American Institute of Physics.
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