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Dopant incorporation during epitaxial growth of a multicomponent oxide thin film from vapor phase: A case study of Fe/YBa2Cu3O7−&dgr;system

 

作者: S. B. Ogale,   I. Takeuchi,   M. Rajeswari,   R. L. Greene,   T. Venkatesan,   D. D. Choughule,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 13  

页码: 1674-1676

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113889

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Incorporation of Fe in YBa2Cu3O7−&dgr;matrix during its epitaxial growth on (001) LaAlO3by pulsed excimer laser ablation is examined. It is shown that oxygen pressure during deposition plays a critical role in the incorporation process and that a low‐temperature postsynthesis annealing is essential for complete substitution. Clustering of iron atoms and its control via the anion controlled reactions are identified as the key features in this context. It is also shown by using atomic force microscopy that Fe incorporation influences the surface morphology. These issues are of importance in the formation of cationic defects in multicomponent thin films. ©1995 American Institute of Physics.

 

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