The dopant and compound forming behavior of As and Au impurities in Ga2Te3is investigated by the combined application of Mo¨ssbauer spectroscopy, x‐ray diffraction, optical transmission, and electrical measurements. Arsenic is shown to act as an‐type dopant in Ga2Te3, and a ternary semiconductor AuGa2Te3is identified. The results allow for a concise description of the ohmic contact formation mechanism in alloyed Au/Te/Au/GaAs and related structures.