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Chemical reaction at the Al–GaSb interface

 

作者: R. G. Susnow,   G. P. Schwartz,   G. J. Gualtieri,   W. A. Sunder,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  (AIP Available online 1986)
卷期: Volume 4, issue 4  

页码: 789-793

 

ISSN:0734-211X

 

年代: 1986

 

DOI:10.1116/1.583557

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM;GALLIUM ANTIMONIDES;SURFACE REACTIONS;RAMAN EFFECT;INTERFACE PHENOMENA;CHEMICAL COMPOSITION;AGING;DIFFUSION;ALUMINIUM ANTIMONIDES;CRYSTAL STRUCTURE;OVERLAYERS;CHEMICAL REACTION YIELD;MEDIUM TEMPERATURE;Al;GaSb

 

数据来源: AIP

 

摘要:

Surface reflection Raman scattering has been used to examine interfacial chemical reactions which occur at the Al–GaSb interface during thermal aging. The chemical composition of the interfacial layer has been determined and reactions have been identified at temperatures as low as 300 °C. Under thermal aging conditions where the Al overlayer is not fully reacted, the primary reaction product is AlSb. Depletion of the aluminum overlayer followed by continued reaction leads to an interdiffused layer of AlxGa1−xSb which exhibits a concentration gradient normal to the interface. Both amorphous and crystalline AlSb have been identified depending on the thermal aging conditions.

 

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