Chemical reaction at the Al–GaSb interface
作者:
R. G. Susnow,
G. P. Schwartz,
G. J. Gualtieri,
W. A. Sunder,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1986)
卷期:
Volume 4,
issue 4
页码: 789-793
ISSN:0734-211X
年代: 1986
DOI:10.1116/1.583557
出版商: American Vacuum Society
关键词: ALUMINIUM;GALLIUM ANTIMONIDES;SURFACE REACTIONS;RAMAN EFFECT;INTERFACE PHENOMENA;CHEMICAL COMPOSITION;AGING;DIFFUSION;ALUMINIUM ANTIMONIDES;CRYSTAL STRUCTURE;OVERLAYERS;CHEMICAL REACTION YIELD;MEDIUM TEMPERATURE;Al;GaSb
数据来源: AIP
摘要:
Surface reflection Raman scattering has been used to examine interfacial chemical reactions which occur at the Al–GaSb interface during thermal aging. The chemical composition of the interfacial layer has been determined and reactions have been identified at temperatures as low as 300 °C. Under thermal aging conditions where the Al overlayer is not fully reacted, the primary reaction product is AlSb. Depletion of the aluminum overlayer followed by continued reaction leads to an interdiffused layer of AlxGa1−xSb which exhibits a concentration gradient normal to the interface. Both amorphous and crystalline AlSb have been identified depending on the thermal aging conditions.
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