首页   按字顺浏览 期刊浏览 卷期浏览 Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing
Photoluminescence studies of interstitial Zn in InP due to rapid thermal annealing

 

作者: J. K. Hsu,   C. Juang,   B. J. Lee,   G. C. Chi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1994）
卷期: Volume 12, issue 3  

页码: 1416-1418

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587310

 

出版商: American Vacuum Society

 

关键词: ZINC;INDIUM PHOSPHIDES;BINARY COMPOUNDS;INTERSTITIALS;PHOTOLUMINESCENCE;ANNEALING;DIFFUSION;EPITAXIAL LAYERS;IMPURITY STATES;InP;Zn

 

数据来源: AIP

 

摘要:

Deep donor to acceptor transitions between interstitial and substitutional Zn in InP are investigated in this study via the photoluminescence technique. Interstitial Zn is to be fully activated when treated by rapid thermal annealing process at 600 °C. When treated at 400 °C, however, interstitial Zn is partially activated so that medium distance deep donor‐to‐acceptor transitions become less available. This medium distance transition is estimated to be in a range between 35 and 60 Å.

 

点击下载:  PDF (221KB)



返 回