Third‐order nonlinearities and coherent transient grating effects of narrow‐gap semiconductors in the midinfrared
作者:
S. Hughes,
C. M. Ciesla,
B. N. Murdin,
C. R. Pidgeon,
D. A. Jaroszynski,
R. Prazeres,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 5
页码: 3371-3375
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359964
出版商: AIP
数据来源: AIP
摘要:
Picosecond excitation‐probe measurements using a far‐infrared free‐electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 &mgr;m. A theoretical model is described to determine the cw third‐order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be −8.6×10−11m2 V−2and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the &khgr;(3)of the transient grating which was found to be −7.2×10−13m2 V−2. The measurements were performed at room temperature on undoped bulk InSb. ©1995 American Institute of Physics.
点击下载:
PDF
(523KB)
返 回