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Third‐order nonlinearities and coherent transient grating effects of narrow‐gap semiconductors in the midinfrared

 

作者: S. Hughes,   C. M. Ciesla,   B. N. Murdin,   C. R. Pidgeon,   D. A. Jaroszynski,   R. Prazeres,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 78, issue 5  

页码: 3371-3375

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359964

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Picosecond excitation‐probe measurements using a far‐infrared free‐electron laser (CLIO) have revealed large nonlinearities for indium antimonide at 4.7 &mgr;m. A theoretical model is described to determine the cw third‐order nonlinear susceptibility and the interband relaxation time of the semiconductor which were found to be −8.6×10−11m2 V−2and 0.3 ns, respectively. Furthermore, the observation of the associated coherent transient grating effects allows us to obtain a coherence time of the laser system (2.5 ps) and the &khgr;(3)of the transient grating which was found to be −7.2×10−13m2 V−2. The measurements were performed at room temperature on undoped bulk InSb. ©1995 American Institute of Physics.

 

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