首页   按字顺浏览 期刊浏览 卷期浏览 Excitonic emissions from hexagonal GaN epitaxial layers
Excitonic emissions from hexagonal GaN epitaxial layers

 

作者: S. Chichibu,   T. Azuhata,   T. Sota,   S. Nakamura,  

 

期刊: Journal of Applied Physics  (AIP Available online 1996)
卷期: Volume 79, issue 5  

页码: 2784-2786

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.361110

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (&Ggr;7c) band to the A (&Ggr;9v) and B (&Ggr;7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energykBT up to room temperature, which suggests the dominance of excitons in the PL spectra. ©1996 American Institute of Physics.

 

点击下载:  PDF (94KB)



返 回