Measurements of resistance (dV/dI) versus bias (V) have been made for Al&sngbnd;I&sngbnd;Bi junctions at 77°K up to pressures of 30 kbar. The junctions were prepared by evaporation upon freshly cleaved mica and the pressures generated in a girdle die using AgCl as the pressure transmitting medium. The results are reversible with pressure cycling. A conduction maximum occurs at ≈0.13 V and a kink at ≈−0.15 V. The maximum changes with pressure at a ratedV/dP=−1.7×10−6V/bar. A change in the tunneling curve is observed at the semimetal to semiconductor transition.