Photoluminescence measurements under different excitation powers and time-resolved photoluminescence experiments were carried out at low temperature on tensile strainedIn0.3Ga0.7Asquantum wells with InGaAs barriers lattice matched to InP. Evidence of a type II recombination is found between carriers confined in the tensile strained layer and in the lattice matched one. This study allows us to propose a precise determination of the light holes band offset in theIn0.3Ga0.7As/In0.53Ga0.47Assystem. ©1997 American Institute of Physics.