Electric field domains in intentionally perturbed semiconductor superlattices
作者:
G. Schwarz,
F. Prengel,
E. Scho¨ll,
J. Kastrup,
H. T. Grahn,
R. Hey,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 5
页码: 626-628
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117928
出版商: AIP
数据来源: AIP
摘要:
Simulations based on a rate equation model for high‐field transport through a doped semiconductor superlattice are presented for the case that one barrier is chosen significantly wider than the others. The distinct impact of that local perturbation on the overall shape of the current–voltage characteristic is discussed and related to the spatial field distribution. The measured current–voltage characteristic of a superlattice, which was intentionally grown with one thicker barrier, confirms the strong asymmetry predicted by the model calculations. ©1996 American Institute of Physics.
点击下载:
PDF
(71KB)
返 回