Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon
作者:
W. B. Jackson,
M. Stutzmann,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 15
页码: 957-959
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97494
出版商: AIP
数据来源: AIP
摘要:
Annealing of metastable dangling bond defects in light‐soaked undoped hydrogenated amorphous silicon (a‐Si:H) is investigated in samples which have been illuminated at different temperatures. Based on a monomolecular annealing model, the distribution of activation energies is determined. The annealing distribution narrows and shifts to higher energies as the temperature during illumination is increased.
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