Electron cyclotron resonance plasma chemical vapor deposition of large area uniform silicon nitride films
作者:
S. Y. Shapoval,
V. T. Petrashov,
O. A. Popov,
M. D. Yoder,
P. D. Maciel,
C. K. C. Lok,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1991)
卷期:
Volume 9,
issue 6
页码: 3071-3077
ISSN:0734-2101
年代: 1991
DOI:10.1116/1.577175
出版商: American Vacuum Society
关键词: CHEMICAL VAPOR DEPOSITION;SILICON NITRIDES;PLASMA;FILMS;REFRACTIVITY;BINARY COMPOUNDS;Si3N4
数据来源: AIP
摘要:
Electron cyclotron resonance plasma (f=2.45 GHz, microwave powerP=200–800 W) generated in a radially uniform magnetic field (B=875–1000 G) was used to produce a large area (15–20 cm diam) uniform plasma stream at 20–30 cm from the source output. Low temperature (70–300 °C) silicon nitride films with a thickness of 800–3000 Å were deposited on 5–20 cm diameter wafers with deposition rates of 100–350 Å/min. Film thickness uniformity was ±1% for 7.6–10.0 cm diam wafers, ±3% for 15 cm diam wafers, and ±9% for 20.0 cm diam wafers. It was found that the film deposition rateWgincreased linearly with the silane flow rate, whileWgincreased slower than power 1/2 with the nitrogen flow rate. The film refractive index was 1.9–2.0 at a silane/nitrogen flow rate ratio of 0.40–0.6. The effects of plasma density and its profile on the film growth rate and uniformity are discussed.
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